Siltectra has developed a technology to split crystalline materials with minimal loss of material. Compared to sawing technologies common in the semiconductor industry, Siltactra’s Cold Split process saves substantial amounts of precious semiconductor material and thus dramatically reduces costs.
The technique is a laser-based, chemical-physical process that uses thermal stress to generate a force that splits the material with exquisite precision along the desired plane, and produces virtually no kerf loss. It can be applied to various semiconductor materials including silicon carbide, gallium arsenide, as well as gallium nitride, sapphire and silicon. The minimal kerf loss lowers the cost of consumables and it allows for the extraction of more wafers per boule than conventional wafering technologies.